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In this paper, a new filling process using an anisotropic epitaxial growth was proposed as the fabrication method of a super junction (SJ) MOSFET. The anisotropic growth controlled with silicon (Si) and chlorine (Cl) source gases was applied to filling of the high-aspect-ratio trenches without voids. Using the process we succeeded in filling trenches with aspect ratio of 18, which is the highest aspect...
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