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We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT = 825/950 μA/μm (circumference-normalized) or 2592/2985 μA/μm (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/μm. Superior NW uniformity is obtained...
Gate-all-around p-i-n silicon nanowires (NW) diodes with effective nanowire diameter from 15 nm down to 4 nm (±1.3 nm) were fabricated to enable interface state density (Nιι) measurements using the charge pumping (CP) method. The Nη of the NWs was also measured by the conductance method and was in good agreement with the CP method. The linear relation between the CP current and the pulse frequency...
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT = 825/950 ??A/??m (circumference-normalized) or 2592/2985 ??A/??m (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/??m. Superior NW uniformity is obtained...
In this letter, we show that undoped-body extremely thin SOI (ETSOI) MOSFETs with SOI thickness in the 4-6-nm range have excellent short-channel control down to 20-25-nm gate lengths, suitable for the 22-nm technology node and beyond. We demonstrate that 6-nm-thin ETSOI devices can deliver high drive currents required for logic applications. Finally, we bring to fore the need for improvements in etch...
We perform the first direct capacitance measurements of silicon nanowires (Si-NWs) and the determination of field carrier mobilities (for both electrons and holes) and their NW size dependence in undoped-channel Si-NW field-effect transistors (FETs) at room temperature. We use a two-FET method for accurate extraction of the intrinsic channel resistance and capacitance of the Si-NWs. The devices used...
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