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The popular electrostatic discharge (ESD) protection device, multi-finger NMOS with gate-coupling technique for better uniform turning-on, can be affected by process variation. The transmission line pulsing (TLP) test results reveal this phenomenon. The trigger voltage of the same pin on some products shifts from 9.5 V to 15.5 V. No such significant difference was ever reported in the literature....
An approximate but analytical expression for the surface field distribution of RESURF LDMOSFETs is presented in terms of the device parameters and the applied drain voltage, which allows calculation of the breakdown voltage via the surface field as a function of the epitaxial layer length. Analytical results are in fair agreement with numerical simulations as well as experimental results reported.
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