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A 10nm logic platform technology is presented for low power and high performance application with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrate. A 0.053um2 SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM) of 140mV at 0.75V. Intensive multi-patterning technology and various...
We demonstrate 1st and 2nd order all-optical ultra-high speed temporal integration of complex optical waveforms by using an integrated CMOS compatible four-port micro-ring resonator. The device offers an unprecedented processing speed > 400GHz.
An ultra-wideband voltage-controlled oscillator (VCO) is presented. The proposed VCO adopts a series/parallel reconfigurable structure of inductor arrays to double the tuning range of their equivalent inductance. An ultra-wide VCO frequency range from 4.2 to 18.7 GHz was measured, achieving 25 improvement of frequency tuning characteristic and 40 reduction effect in die area.
We present a dissipative four wave mixing tunable laser based on a integrated CMOS-compatible high-Q nonlinear ring resonator, emitting subpicosecond pulses at 200GHz-repetition rate. Quasi-sinusoidal 800GHz emission regime is also demonstrated.
We present a subpicosecond, 200 GHz-repetition rate, passively mode-locked laser based on high-harmonic four-wave mixing in an integrated CMOS-compatible high-Q nonlinear ring resonator.
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