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An AlGaSb avalanche photodiode (APD), having a large ionization rate ratio due to resonant impact ionization, has been fabricated and tested. The excess noise factor and the ionization rates for holes and electrons have been measured. A low excess noise factor of 3.8, which is 1.2 dB lower than that of the conventional GaInAs APD, has been obtained. From this excess noise factor, the effective value...
An AlGaAs/GaAs PIN photodiode and a GaAs transimpedance amplifier including six FETs have been monolithically integrated on a GaAs substrate. A photoreceiver operation exhibiting an excellent linearity has been demonstrated. The photodiode sensitivity of 0.44 A/W and the amplifier transimpedance of 1.0 ? l04 V/A have been determined from the measurement.
A planar structure AlGaAs/GaAs PIN photodiode was fabricated by first using MOCVD. The p+-region was formed by Zn-diffusion in a high-resistivity AlGaAs window layer. The internal quantum efficiency, close to unity, and the cut-off frequency, as high as 1.2 GHz, have been demonstrated by 280 ?m diameter devices.
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