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InAs was grown by molecular-beam epitaxy on (001) GaAs substrates with triangular arrays of holes, which were patterned by focused ion beam. In the case of the growth on large and deep holes (diameter: 400-500nm, depth: 50-300nm, pitch: 600nm), InAs was grown laterally on the sidewall of the hole, and the other dots were not grown around the holes. The lateral film thickness of InAs increased as the...
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