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Photoresponse of Au nanoparticle functionalized semiconducting GaN (Au-GaN) nanowires is reported for an optical switching using 532 excitation. Wide band gap GaN nanowires are grown by catalyst-assisted chemical vapor deposition technique and functionalized with Au in the chemical route. Au-GaN nanowires show surface plasmon resonance (SPR) mode of Au nanoclusters around 550 nm along with characteristic...
The control of nucleation site size and density for Au catalyst-driven growth of GaN nanowires is reported. By using initial Au film thicknesses of 15–50Å we have shown that annealing between 300 and 900°C creates Au cluster size in the range 30–100nm diameter with a cluster density from 300 to 3500μm −2 .Conventional optical lithography to create parallel Au stripes shoes that a minimum separation...
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