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The fabrication and operation of a 1 mu m*1 mu m gated GaAs-(AlGa)As resonant tunnelling diode is described. By biasing the gate, the I/V characteristic can be varied and hence the negative differential resistance of the diode can be controlled. Using a wafer with an appropriate doping profile ensures that the maximum depletion due to the gate will occur close to the (AlGa)As tunnel barriers. When...
A single-sided modulation-doped 90 AA quantum well with Al/sub 0.45/Ga/sub 0.55/As barriers has been realised using metal-organic vapour-phase epitaxy with selenium doping. Hall effect measurements give a sheet carrier density n/sub s/=2.27*10/sup 12/ cm/sup -2/ and a mobility mu =6050 cm/sup 2/ V/sup -1/ s/sup -1/ at 300 K. At 4.2 K, Shubnikov-de Haas and quantum Hall effect measurements give n/sub...
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