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The oxygen uptake on H-terminated and on differently reconstructed, clean 3C-SiC(001) and 6H-SiC{0001} surfaces was investigated by X-ray photoelectron spectroscopy (XPS). The samples were cleaned in ultrahigh vacuum (UHV) by heating them in the presence of a Si flux at different temperatures. H-terminated surfaces were prepared by exposure to hydrogen atoms in the UHV-system. Atomic hydrogen was...
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