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In this paper, the diffusion enhanced intermixing effect in strained InGaAsP multiquantum wells due to plasma immersion ion implantation (PIII) of Ar + and post-implant annealing is presented. Firstly, we report that a 20 kV Ar + PIII at a fluency of 10 16 cm -2 together with a furnace anneal at 650 o C resulted in an enhanced blue shift in the photoluminescence...
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