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ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research,...
A new medium access control (MAC) scheme for mobile ad-hoc networks (MANETs) has been proposed with the goal of achieving fairness at the MAC layer. Most of the recently proposed contention-based MAC for MANET still use binary exponential backoff (BEB) algorithm to solve the contention problem, which contributes partially to instability and unfair medium sharing. In this paper, we propose to combine...
The laser gain and current density at room temperature are analysed for disordered (interdiffusion induced) Al/sub 0.3/Ga/sub 0.7/As/GaAs single quantum well structures at a carrier injection level of 4*10/sup 12/ cm/sup -2/. The results show that both the peak gain and current density remain about the same strength during the initial stages of disordering, and provide a bandwidth of 55 nm.<<ETX>>
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