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In this paper the analysis of SNM, RNM, WNM and static power variation with width of access, load and driver have been carried out for nanoscale FinFET based SRAM cell. FinFET based SRAM design has been proposed as an alternative solution to the bulk devices. It can be inferred from the results that with increase in the width of driver FinFET, the high SNM reduces and low SNM increases. This is due...
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