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In this paper we report the dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory applications. We measured the time constant of electron transport between InAs self-assembled quantum dots and the n-GaAs substrate by making use of the frequency dependence of the CV signal due to the InAs dots. We obtained a time constant of 2.1 /spl mu/s from experiments. The experimental...
The authors discuss the modeling and operating characteristics of InGaAs/In(AlGa)As resonant-tunneling hot electron transistors (RHETs), using a self-consistent calculation for a resonant-tunneling emitter and a Monte Carlo simulation for hot electron transport in the base region. Coupled plasmon-longitudinal-optical-phonon-mode scattering and electron-electron (e-e) scattering in the Landau damped...
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