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Describes a study of the DC and microwave characteristics of resonant-tunnelling hot electron transistors (RHETs) fabricated using a new i-InAlGaAs/i-GaAs collector barrier structure. The current gain at a low collector-base voltages was improved, enabling the RHETs to operate at low collector-emitter voltages and to decrease the transit time. A cutoff frequency f/sub T/ of 121 GHz was achieved at...
The authors discuss the modeling and operating characteristics of InGaAs/In(AlGa)As resonant-tunneling hot electron transistors (RHETs), using a self-consistent calculation for a resonant-tunneling emitter and a Monte Carlo simulation for hot electron transport in the base region. Coupled plasmon-longitudinal-optical-phonon-mode scattering and electron-electron (e-e) scattering in the Landau damped...
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