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Hot electron dynamics was investigated, with a focus on scattering between bulk states and the C1 surface state that is formed on the (24)-reconstructed In-rich surface of InP(100). The latter surface was prepared via metal organic chemical vapor deposition (MOCVD) and monitored by reflectance anisotropy spectroscopy (RAS/RDS). Two-color twophoton photoemission (2PPE) was employed with laser pulses...
Abstract. For the first time direct contamination-free transfer to UHV was achieved for the P-rich InP(100) surface that is the easiest to prepare and control in the MOCVD environment. To avoid contamination during transfer a commercial MOCVD apparatus was modified to allow for transfer of samples to the 10-9mbar UHV range within a very short time (less than 20s) [1]. Epitaxial InP(100) films were...
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