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We have developed a new device characterization technique called High-Voltage Electron-Beam-Induced-Current (HV-EBIC). This technique marks a breakthrough in the art of EBIC, providing a much improved probing depth and spatial resolution without destructive sample preparation procedures. It can probe structures 0.5 /spl mu/m underneath the surface with a spatial resolution better than 0.1 /spl mu/m...
A low threshold current density of 640 A/cm/sup 2/ was obtained in a 1.5 Gmm GaInAs/AlGaInAs multiple quantum well laser diode, grown by metal organic chemical vapour deposition, with continuously graded-index separate-confinement heterostructure. An internal waveguide loss of 14 cm/sup -1/ and internal quantum efficiency of 59% were obtained, which are comparable to those of GaInAs/GaInAsP quantum...
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