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In this work neutron‐sensitive scintillators based on GaN have been produced by MOCVD. The scintillators consist of GaNepilayers grown on 2 inch double side polished sapphire wafers, with neutron conversion layers on top. Two conversion materials were investigated: enriched LiF and Gd. Undoped and silicon‐doped epilayers were examined for their scintillation properties. All of the scintillators showed...
We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 × 1017 cm−3). It is shown that annealing at 500°C for 2 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 9.2(±0.2) × 10−4 and 2.4(±0.2) × 10−5 Ωcm2 for the as-deposited and annealed samples, respectively. Atomic force microscopy results show that the...
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