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Semiconductor broadband light sources are greatly in demand for highly-sensitive sensing, spectroscopy, optical telecommunications, eye-safe low-speckle sources for flash lidar and high resolution bio-imaging particularly optical coherence tomography (OCT). In this paper, we report on the observation of broadband lasing action from the InAs/InAlGaAs quantum dash (Qdash) structure. This novel device...
We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical...
We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial...
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