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We perform measurements of far field pattern of various quantum-confined heterostructures namely quantum well (QW), quantum dash (Qdash), and quantum dot (Qdot) lasers to study the effect of different active gain mediums of semiconductor lasers on the optical beam quality and coupling efficiency. The beam pattern profile of the Qdash laser is similar to that of the QW laser (FWHM ~ 20deg) while Qdot...
We study the optical gain and alpha factor of InAs/InAlGaAs quantum-dash lasers on InP substrate after being subjected to the postgrowth intermixing process. The intermixing was achieved using dielectric capping process that involves the deposition of dielectric film and subsequent rapid thermal annealing. Compared to the un-intermixed laser, we found that the intermixed lasers with a 93 nm bandgap...
We demonstrate the effect of nonequilibrium carrier distribution in a highly inhomogeneous quantum-dash-in-well laser. The electroluminescence spectra show the presence of localized photon reabsorption and lasing action from different quantum-dash ensembles at room temperature.
Gain and alpha factors were measured on InAs-InAlGaAs quantum-dash lasers with their heterostructures intermixed by either a dielectric-capping or ion-implantation technique. The laser intermixed by the dielectric-capping technique exhibits a blue shift as much as 93 nm without degrading the laser quality. In comparison, the laser intermixed by the ion-implantation technique has a larger shift but...
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