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Unipolar resistive switching memory cells were fabricated using a Mg0.84Zn0.16O2−δ thin film, sandwiched between p+-Si (100) substrate and Cr/Au top electrodes. Electrical measurements showed a large memory window and memory window margin of 107 and 104, respectively. Furthermore, a wide switching voltage distribution gap of 3.6 V between the switching-ON and -OFF processes was obtained for different...
All Zn1−xErxO (x=0.04, 0.05, and 0.17) films deposited on glass substrates by radio-frequency reactive magnetron sputtering exhibit the mixture of ferromagnetic and paramagnetic phases at room temperature. The estimated magnetic moment per Er ion decreases with the increase of Er concentration. The temperature dependence of the magnetization indicates that there is no intermetallic ErZn buried...
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