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An accurate electrical fault characterization is required for the correct diagnosis and localization of CMOS interconnect defects. It has been traditionally accepted that a resistive open defect located at the beginning of an interconnecting line causes the maximum possible delay. The first-order approximation is sufficient to model the behaviour of high resistive opens. However, in this paper it...
Full open defects on the interconnect lines cause the broken wires to become floating. The voltage of a floating line depends on its topological characteristics, namely: parasitic capacitances to neighbouring structures, transistor capacitances of the downstream gate(s) and the trapped charge. However, in nanometric CMOS technologies, the oxide thickness is reduced below a few tens of Aring causing...
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