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Although suitable for the reduction of the threading dislocation density in GaN layers the widely used two-step MOCVD method does not work as efficiently for AlGaN. This is due to slow surface diffusion of the Al species. In the present paper, the previously reported in situ multistep method for MOCVD growth of high-quality GaN films is adopted for the growth of Al 0.12 Ga 0.88 N films...
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