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In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent pulsed-laser melting (PLM) annealing have been performed. Time-of-flight secondary ion mass spectroscopy (SIMS) measurements confirm that Ti concentration exceed the Mott limit in the implanted layer, and glancing...
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