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We have deposited intrinsic amorphous silicon (a-Si:H) using the ECR-CVD (Electron Cyclotron Resonance Chemical Vapor Deposition) technique, and we have analyzed the interface between a-Si:H and crystalline silicon (c-Si). In order to obtain the a-Si:H/c-Si density of interface defects (Dit), we have followed the conductance method proposed by E. H. Nicollian and A. Goetzberger, normally applied to...
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