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A p-type Ge quantum dot infrared photodetector is investigated in this paper. The intrinsic thick Si layers are utilized to block the dark current under low bias and adjust the tunneling probability by controlling applied field to tune the responsivity spectrum. The 30 K responsivity spectrum shows broadband from 2 to 9 μm at zero bias with photovoltaic effect and extends its range to 20 μm when the...
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