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Dual action of quantum-dot saturable absorber and Kerr lens mode locking of a diode-pumped Yb:KGW laser was demonstrated. The laser delivered 105 fs pulses with 2.5 W of average power and >300 kW of peak power.
This paper compares device performance for In0.53Ga0.47As MOSFETs using single HfO2 gate dielectric with stacked gate dielectrics using various interfacial layers between HfO2 and In0.53Ga0.47As substrate including Al2O3, HfAlOx, LaAlOx, and LaHfOx. Of the gate stacks studied, Al2O3/HfO2, HfAlOx/HfO2, and LaAlOx/HfO2 bilayer gate dielectrics exhibit lower subthreshold swing, higher drive current and...
Research on high-k (HfO2) materials has been expanded significantly. However, MOSFETs with high-k gate dielectrics on silicon still have several problems with relatively low mobility of high-k devices in thin EOT regime compared to the universal curve. In this work, as an alternative of silicon substrate, InP and In0.53Ga0.47As has been studied. W e present the material and electrical characteristics...
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