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Flexible Tellurium Nanorope Films
In article number 2300557, Tae Geun Kim and co‐workers present hexagonal‐shaped, ultrathin and highly flexible Te and Te–metal nanorope arrays grown by low‐power radiofrequency (RF) sputtering. Blue organic light‐emitting diodes (OLEDs) with 7‐nm Te–W nanoropes as the anode exhibit significantly higher external quantum efficiencies, lower turn‐on voltages and superior...
Nanomaterials that can be easily processed into thin films are highly desirable for their wide range of applicability in electrical and optical devices. Currently, Te‐based 2D materials are of interest because of their superior electrical properties compared to transition metal dichalcogenide materials. However, the large‐scale manufacturing of these materials is challenging, impeding their commercialization...
Phase‐change random‐access memory is a promising non‐volatile memory technology. However repeated phase‐change operations can cause durability issues owing to defects formed by long‐distance atom diffusion. To mitigate these issues, phase‐change heterostructure (PCH) devices with confinement material (CM) layers based on transition metal dichalcogenides (TMDs) such as TiTe2 have been proposed. This...
Phase‐Change Heterostructure Memory
In article number 2303659, Tae Geun Kim and co‐workers present phase‐change heterostructure (PCH) memory devices that control vertical atomic diffusion during operation. The device performance, such as power consumption and thermal stability, is determined by the choice of transition metal dichalcogenide‐based confinement materials with different cohesive energies,...