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We present an electro-photonic circuit integrated into a 65-nm DRAM periphery process. Its photonic circuit features 2-dB/mm waveguide, 7-dB grating coupler, 10-Gb/s modulator, and 5-Gb/s Ge photodiode.
We present a 10-Gb/s, 1×4 optical link based on a DRAM-integration-ready bulk-silicon modulator for multi-drop CPU-DRAM interconnects. The bulk-silicon modulator operated at 10 Gb/s on a die, and at 5 Gb/s in a QFP package. The 1×4 optical link was limited not by signal integrity but by optical power budget, demonstrating its scalable capacity for the future multi-drop memory bus.
This paper focuses on the modeling, design, fabrication, and test of planar lightwave structures composed of multiple materials that are integrated together, including passive and active optical components and electronic circuits. The heterogeneous integration of thin film compound semiconductor active devices embedded in passive optical polymer structures will be described. The integration platforms...
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