The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Z-cut LiNbO3 single crystal wafers were etched by the inductively coupled plasma reactive ion etching (ICP-RIE) technique by using the boron trichloride (BCl3)/ Argon (Ar) mixture gases. Effects of the ICP power and RF power ranged from 100 W to 700 W of the ICP-RIE system were studied on the etching rate, surface roughness, and corresponding DC bias under different working pressures ranged from 10...
In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted...
In this study we presents an effective and simple process for forming multi-level vertical structures on a (100) silicon wafer. The dual materials including gold and platinum was employed as catalytic material in the etching process. We employed an etchant solution consisting of 4.6 M hydrofluoric acid, 0.44 M hydrogen peroxide, and isopropyl alcohol to produce microstructures at an etching rate of...
In this paper, we demonstrate and compare the formation of ordered etching masks for submicron patterned sapphire through use of the nanosphere lithography and nanoimprint lithography methods. Both NSL and NIL were applied to produce the submicron honeycomb network and cone protrusion array structure on the sapphire surface as etching masks. The sequent ICP-RIE technique was applied to further etch...
Mass production of micro-reformers raises various problems still unsolved, such as the evaluation of their internal temperature and flow rate. Such issues influence the efficiency of micro reformers. To our knowledge, no investigation has elucidated the internal operation of micro reformers. Hence, this work fabricates micro flow sensors on a flexible substrate using the micro-electro-mechanical systems...
In this letter, a novel structure of the polycrystalline silicon thin-film transistors (TFTs) with a self-aligned gate and raised source/drain (RSD) formed by the damascene process has been developed and investigated. Comparing with the conventional coplanar TFT, the proposed RSD TFT has a remarkable lower off-state current (177 to 6.29 nA), and the on/off current ratio is only slightly decreased...
The fabrication of a micro-machined microwave switch using the standard 0.35mum CMOS process and the post-process by wet etching without extra mask is implemented in this work. The components of the microwave switch are coplanar waveguide (CPW) transmission lines, a suspended membrane and supported springs. Experimental results show that the driving voltage of the switch approximates to 17 V. The...
We proposed and demonstrated an air-gap Cu interconnects using the damascene architecture and HSQ (hydrogen silsesquioxane) wet etching sacrificial process. The SEM cross-section images of Cu air-gap interconnect with different diffusion barriers fabricated by using the damascene architecture and HSQ sacrificial process are investigated. The line-to-line leakage current conduction mechanisms of air-gap...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.