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A high-performance ZnO thin film transistor (ZnO-TFT) with SiO 2 /Ta 2 O 5 /SiO 2 (STS) multilayer gate insulator is fabricated by sputtering at room temperature. Compared to ZnO-TFTs with sputtering SiO 2 gate insulator, its electrical characteristics are significantly improved, such as the field effect mobility enhanced from 11.2 to 52.4cm 2 /V s,...
Top-contact Copper phthalocyanine (CuPc) thin-film field-effect transistor (TFT) with SiO 2 /Ta 2 O 5 /SiO 2 (STS) multilayer as the dielectric was fabricated and investigated. With the multi-layer dielectric, drive voltage was remarkably reduced. A relatively large on-current of 1.1×10 −7 A at a V G S of −15V was obtained due to the strong coupling...
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