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The effect of number of quantum wells and quantum well thickness on the optical performance of InGaN vertical cavity surface emitting laser (VCSEL) was numerically investigated using Integrated System Engineering Technical Computer Aided Design (ISE TCAD) simulation program. The simulation results indicated that the output power and differential quantum efficiency of the double quantum well (DQW)...
InGaN LEDs on sapphire substrates were simulated using ISE TCAD software. In order to obtain a high output power, 15 pairs of GaN (50 nm)/Al0.27Ga0.73N (52 nm) DBR were introduced between the i-GaN and n-GaN layers. The weak output power resulting from our simulation may be related to the inhomogeneous holes distribution in the quantum wells. Also the piezoelectric field due to strains which determines...
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