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The strain sensitivity in epitaxial Sn0.94K0.06O2 thin films grown on buffered c-plane sapphire was systematically investigated. Both XRD and Raman results demonstrate the biaxial tensile strain induced by the lattice mismatch between substrate and film could be altered by a SnO2 buffer layer. When the tensile strain in the bc plane becomes larger, more K ions tend to occupy substitutional sites,...
The role of acceptor and donor defects in epitaxial Al-doped SnO2 films were systematically investigated. Al doping introduces acceptor defects (AlSn) at low doping concentration while donor ones (Ali) in a concentration range from 8 to 10at%. The band gap is firstly narrowed by hole-doping and then widened by electrons introduced by oxygen vacancies and Ali. Air-annealing absorbs oxygen and makes...
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