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High gain GaAs photoconductive semiconductor switch offers many advantages for the pulsed power applications including beam accelerator, optically activated electrical fireset, electro-optic driver1–2. In view of the specific application considerations, it is required to replace the desktop laser system by laser diode (LD) sources, i.e., micro-joules excitation energy, which leads to the promise of...
Photoconductive Semiconductor Switches (PCSSs) are potential in generation of high-power impulse due to the unique performance compared with traditional high-power pulsed devices. Gallium arsenide (GaAs) photoconductive semiconductor switch is regarded as a promising pulse-power device for the outstanding properties, such as simple structure, low optical trigger energy, low timing jitter, high breakdown...
Smart substation is one of the key parts of smart grid and the network of process layer is an important foundation for smart substation which is related to the reliability and real-time of data acquisition and switch control. The type of message of process layer which include GOOSE (General Object-Oriented Substation Event), MSV (Multiple Sample Value) and synchronization with network are generalized...
Compared with traditional GaAs photoconductive semiconductor switch (PCSS), higher current (>5 kA) pulse is obtained cascaded with discharging of a spark gap and the mechanism of the discharging between PCSS and spark gap is discussed.
This paper reports the experimental results of pulse-charged spark gap based on GaAs semiconductor photoconductive switches. With variation in the position and structure of spark gap, the electric characteristics of output waveforms are obtained and the breakdown mechanism in pulse-charged spark gap based on photoconductive switches is analyzed. Results imply that high current or ultrafast pulse could...
Based on the analysis of the characteristic of ultrashort optical soliton, third-order dispersion (TOD ) and Raman scattering influences were taken into account. The quantitative relationship between the self-frequency shifting with distance, pulse width and TOD are found out using the Numerical simulation and fitting method. The size of the pulse time delay is also studied caused by the self-frequency...
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