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High-quality InGaAs PIN photodiodes have been made from high-purity layers grown on InP substrate by molecular beam epitaxy. The diodes are top-illuminated mesa-type passivated and planarised by polyimide. The devices exhibit dark current densities as low as 2.3 ? 10?5 A/cm2 at ?10 V with a breakdown voltage of ?80 V. These values are comparable with those obtained by other more conventional growth...
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