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This paper discloses development and evaluation of die attach material using base metals (Cu and Sn) by three different type of composite. Mixing them into paste or sheet shape for die attach, we have confirmed that one of Sn-Cu components having IMC network near its surface has major role to provide robust interconnect especially for high temperature applications beyond 200°C after sintering.
We have examined printing technology which is adaptable to 3DIC bump-forming for (both front-side bump and back-side bump. The materials for bumping require several features for TSV process circumstances and 3DIC stacking followed by reflow. We chose Nano-Function material for the purpose which was initially developed for power semiconductor attachment. The result shows good possibility. 20µm bump...
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