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The annealing effects on the electrical properties and microstructures of indium oxide (In 2 O 3 ) thin films were investigated. The In 2 O 3 thin films with the thickness of about 150nm were annealed at various temperatures ranging from 100 to 600°C in air after the sputtering deposition. It was found that the carrier density of the In 2 O 3 thin films...
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