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The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS2 transistors. It was found that high temperature (175°C) annealing in air could...
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