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This paper reports the radiation tolerance study of a commercial 65nm technology, which is a strong candidate for the Large Hadron Collider applications. After exposure to 3MeV protons till 1Grad dose, the 65nm CMOS transistors, especially the pMOSFETs, showed severe long-term degradation mainly in the saturation drain currents. There were some differences between the degradation levels in the nMOSFETs...
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