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The low-pressure (20 mbar) organometallic vapour-phase epitaxy (LP-OMVPE) of GaInP on non-planar {001} GaAs substrates has been examined. The encountered { h ̄ h ̄k}Ak > h and {11̄0} faceting features develop along the bottom corner and the top edge configurations of the inverted and dovetail grooves, respectively. At higher temperatures (T ≥ 720°C) these features are no longer present. The results...
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