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The low-pressure (20 mbar) organometallic vapour-phase epitaxy (LP-OMVPE) of GaInP on non-planar {001} GaAs substrates has been examined. The encountered { h ̄ h ̄k}Ak > h and {11̄0} faceting features develop along the bottom corner and the top edge configurations of the inverted and dovetail grooves, respectively. At higher temperatures (T ≥ 720°C) these features are no longer present. The results...
The low pressure (20 mbar) organometallic vapour phase epitaxy (LP-OMVPE) of GaAs/GaInP in asymmetric grooves, patterned on (111)B GaAs substrates, has been examined. One of the characteristic features of this deposition is that facets develop along the top edges where the side wall planes meet the top surface. The origin of small facets at the top edge appears to be due to pre-growth conditions....
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