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Self-heating (SH) has emerged as an important performance, variability, and reliability concern for floating body transistors (FB-FET), namely, extremely-thin-silicon-on-insulator (ETSOI), SOI-FinFET, gate-all-round NW-FET (GAA-FETs), etc. The floating body topology offers electrostatic control, but restricts heat outflow: apparently an intrinsic trade-off. In this paper, we trace the trajectory of...
In this paper, we present first demonstration of InGaAs-on-insulator (-OI) MOSFETs with wafer size scalability up to Si wafer size of 300 mm and larger by direct wafer bonding (DWB) process using InGaAs channels grown on 4-inch Si donor substrates with III–V buffer layers instead of InP donor substrates. It is found that this DWB process can provide the high quality InGaAs thin films on Si. The fabricated...
MOSFETs using channel materials with low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime [1, 2]. From this viewpoint, attentions have recently been paid to III-V and Ge channels. This is because III-V semiconductors have extremely high electron mobility and low electron effective mass and Ge has extremely high...
We have studied structural, electrical, photoelectric and optical properties of two series of polymorphous silicon thin films deposited by PECVD with variation of silane and hydrogen gas mixture pressure and substrate temperature. The change of gas pressure did not affect substantially films' Raman spectra, but resulted in changes of photoconductivity values and spectral dependencies of absorption...
Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.
Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered.
We report the first demonstration of sub-60 nm deeply-scaled InGaAs- and InAs-on-insulator MOSFETs on Si substrates with MOS interface buffer engineering and Ni-InGaAs metal source/drain (S/D). The devices provide 400 % Ion enhancement, when comparing to that of an In0.53Ga0.47As control device with the same drain-induced-barrier-lowering (DIBL) of 100 mV/V, which is attributable to the mobility enhancement...
We report the design, fabrication and testing of an optimized 6-stage planar thermoelectric (TE) micro cooler producing a DeltaT = 22.3degC at a power consumption of 26 mW, the best performance reported to date for a thermoelectric microcooler. This microcooler has a compact chip-scale design, and utilizes Bi2Te3 and Sb2Te3 thermoelectric thin films deposited on thermally isolating silicon oxide bridges...
Research on high-k (HfO2) materials has been expanded significantly. However, MOSFETs with high-k gate dielectrics on silicon still have several problems with relatively low mobility of high-k devices in thin EOT regime compared to the universal curve. In this work, as an alternative of silicon substrate, InP and In0.53Ga0.47As has been studied. W e present the material and electrical characteristics...
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