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In this paper, we conducted the sub 7nm technology benchmarking for logic application using performance comparison between III–V multi-gate(double, tri, gate-all-around) nMOSFET and Si nFinFET. The benchmarking was executed based on the physical parameters extracted from Virtual-Source(VS) modeling and well-calibrated TCAD simulation. Especially by quantitatively investigating fin width(Wfin) and...
This paper reports Extremely-Thin-Body (ETB) InAs quantum-well (QW) MOSFETs with improved electrostatics down to Lg = 50 nm (S =103 mV/dec, DIBL = 73 mV/V). These excellent metrics are achieved by using extremely thin body (1/3/1 nm InGaAs/InAs/InGaAs) quantum well structure with optimized layer design and a high mobility InAs channel. The ETB channel does not significantly degrade transport properties...
This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/µm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at Lg = 100 nm. This record performance is achieved by using a low Dit composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway...
For the first time strain additivity on III-V using prototypical (100) GaAs n- and p-MOSFETs is studied via wafer bending experiments and piezoresistance coefficients are extracted and compared with those for Si and Ge MOSFETs. Further understanding of these results is obtained by using multi-valley conduction band model for n-MOS and performing k.p simulations for p-MOS. For GaAs n-MOSFET, uniaxial...
Research on high-k (HfO2) materials has been expanded significantly. However, MOSFETs with high-k gate dielectrics on silicon still have several problems with relatively low mobility of high-k devices in thin EOT regime compared to the universal curve. In this work, as an alternative of silicon substrate, InP and In0.53Ga0.47As has been studied. W e present the material and electrical characteristics...
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