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Fabrication of normally-off hydrogen-terminated diamond field-effect transistors (FET) has been carried out by using 3nm Al2O3 dielectric layer, which was formed by thermally oxidizing 3nm Al in air. 100nm Al was covered on the 3nm Al2O3 dielectric layer to form Al/Al2O3 gate. The leakage current density of FET with 6μm gate length kept smaller than 5×10−7A·cm−2, while the gate voltages swept from...
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