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The influences of stress on the interfacial reactions of Ti and Ni metal thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to enhance the formation of Ti and Ni silicides. For Ti and Ni on stressed...
The effects of nitrogen ion implantation on CoSi 2 contacts on shallow junctions have been investigated. The formation, growth, stability and resistivity of silicides as well as the removal of residual defects have been studied. Nitrogen ion implantation was shown to improve the thermal stability of CoSi thin films. The sheet resistance was found to be nearly constant in a wide range of temperature...
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