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Effects of stress on the formation and growth of nickel silicides in Ni thin films on (001)Si have been investigated. Compressive stress induced by backside SiO 2 film on the silicon substrate was found to retard significantly the formation of Ni 2 Si, NiSi and NiSi 2 on (001)Si. On the other hand, tensile stress induced by backside Si 3 N 4 and CoSi 2 ...
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