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MeV energy ion-implantation induced modifications in simple binary glass As 2 Se 3 have been monitored by de conductivity measurements. The study testifies that the process of ion-implantation at MeV energy is a novel technique in modifying the electronic properties of semiconductors. Ni ion seems to have more drastic changes than Ag and Ge ions. As small a dose of 75 MeV Ni ions as...
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