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We have studied the influence of surfactant on solid phase epitaxy of an amorphous Ge layer on Si(111) using in situ scanning electron microscopy. A monolayer of As overlayer deposited on the amorphous Ge layer raises the Ge crystallization temperature by up to 100 K both on 7 × 7 and “1 × 1” regions, as well as suppresses islanding of Ge. The crystallization temperature raise is discussed as pining...
Ge solid phase epitaxy on a Si(111) surface has been directly observed by secondary electron surface microscopy which is based on scanning electron microscopy. Ge island formation initially occurs at steps and out-of-phase boundaries of (7 7) domains. These results confirm the origin of previously reported mesh patterns of Ge islands grown on Si(111).
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