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Self-assembled InSb nanodots (NDs) were grown on a GaSb (100) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30μm. In this particular study, the...
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