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Positron annihilation is used to probe vacancy-type defects in electroless deposited (ELD) Cu films on Ta/TaN/SiO2/Si. Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons are measured for ELD-Cu fabricated with different residual impurity concentrations using a novel electrolyte. For as-deposited films, the major species of vacancy-type defects are identified...
Vacancy-type defects in gas cluster ion-implanted Si were probed by monoenergetic positron beams. The acceleration energy of Ar-ion clusters ranged between 20 – 60 keV, and the mean cluster size was 2×103 atoms. Doppler broadening spectra of the annihilation radiation were measured, and the vacancy-rich region was found to localize at a depth of 0 – 13 nm. Two different defect species were found to...
Point defects introduced by homoepitaxial growth of thin films on SrTiO3 substrates were studied by means of positron annihilation. The SrTiO3 films were grown by molecular-beam epitaxy (MBE) without using an oxidant. The line-shape parameter S was found to be increased by the growth of the film, which was attributed to the diffusion of oxygen from the substrate into the film, and the resultant introduction...
Pore in low-k SiOCH and vacancies in electroplated Cu buried in damascene structures were studied using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons were measured for the samples through Cu/low-k damascene processes. The mean pore size in SiOCH decreased after contact etching, but kept constant during Cu metallization. The...
Pore characteristics of SiOCH layers in fine-pitch Cu-damascene interconnects were studied using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons were measured for the samples fabricated with the line/space widths of 0.27/0.27 and 1.08/1.08 mum, respectively. From measurements of the positronium (Ps) lifetimes, the mean pore size...
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