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Vacancy-type defects in gas cluster ion-implanted Si were probed by monoenergetic positron beams. The acceleration energy of Ar-ion clusters ranged between 20 – 60 keV, and the mean cluster size was 2×103 atoms. Doppler broadening spectra of the annihilation radiation were measured, and the vacancy-rich region was found to localize at a depth of 0 – 13 nm. Two different defect species were found to...
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